Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHJ8N60E-T1-GE3

SIHJ8N60E-T1-GE3

SIHJ8N60E-T1-GE3

Part NumberSIHJ8N60E-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V POWERPAK SO-8L

DatasheetSIHJ8N60E-T1-GE3

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 8A (Tc) 89W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIHJ8N60E-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHJ8N60E-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHJ8N60E-T1-GE3.
We are offering SIHJ8N60E-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHJ8N60E-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHJ8N60E-T1-GE3
Standard Package	1
Manufacturer	Vishay Siliconix
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	520mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	754pF @ 100V
FET Feature	-
Power Dissipation (Max)	89W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIHJ8N60E-T1-GE3 - Related Products

	CSD17308Q3	Texas Instruments, N-Channel 30V 14A (Ta), 44A (Tc) 2.7W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3), NexFET™	View
	BUK9230-100B,118	Nexperia USA Inc., N-Channel 100V 47A (Tc) 167W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	R8008ANJFRGTL	Rohm Semiconductor, N-Channel 800V 8A (Tc) 195W (Tc) Surface Mount LPTS, Automotive, AEC-Q101	View
	FDMS7670	ON Semiconductor, N-Channel 30V 21A (Ta), 42A (Tc) 2.5W (Ta), 62W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	STP16NF06	STMicroelectronics, N-Channel 60V 16A (Tc) 45W (Tc) Through Hole TO-220AB, STripFET™ II	View
	APT56M50L	Microsemi Corporation, N-Channel 500V 56A (Tc) 780W (Tc) Through Hole TO-264,	View
	SIR440DP-T1-GE3	Vishay Siliconix, N-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	CSD18502KCS	Texas Instruments, N-Channel 40V 100A (Tc) 259W (Tc) Through Hole TO-220-3, NexFET™	View
	SIS402DN-T1-GE3	Vishay Siliconix, N-Channel 30V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	STP45N60DM6	STMicroelectronics, N-Channel 600V 30A (Tc) 210W (Tc) Through Hole TO-220, MDmesh™ DM6	View
	SQ2362ES-T1_GE3	Vishay Siliconix, N-Channel 60V 4.3A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236), Automotive, AEC-Q101, TrenchFET®	View
	IRLTS6342TRPBF	Infineon Technologies, N-Channel 30V 8.3A (Ta) 2W (Ta) Surface Mount 6-TSOP, HEXFET®	View

SIHJ8N60E-T1-GE3 - Tags

SIHJ8N60E-T1-GE3 SIHJ8N60E-T1-GE3 PDF SIHJ8N60E-T1-GE3 datasheet SIHJ8N60E-T1-GE3 specification SIHJ8N60E-T1-GE3 image SIHJ8N60E-T1-GE3 India Renesas Electronics India SIHJ8N60E-T1-GE3 buy SIHJ8N60E-T1-GE3 SIHJ8N60E-T1-GE3 price SIHJ8N60E-T1-GE3 distributor SIHJ8N60E-T1-GE3 supplier SIHJ8N60E-T1-GE3 wholesales