SIHJ8N60E-T1-GE3
SIHJ8N60E-T1-GE3
Part Number SIHJ8N60E-T1-GE3 Description MOSFET N-CH 600V POWERPAK SO-8L Package / Case PowerPAK® SO-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 8A (Tc) 89W (Tc) Surface Mount PowerPAK® SO-8
To learn about the specification of SIHJ8N60E-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHJ8N60E-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHJ8N60E-T1-GE3.
We are offering SIHJ8N60E-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIHJ8N60E-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIHJ8N60E-T1-GE3 Standard Package 1 Manufacturer Vishay Siliconix Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 520mOhm @ 4A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 754pF @ 100V FET Feature - Power Dissipation (Max) 89W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8
SIHJ8N60E-T1-GE3 - Related ProductsMore >>
NVD6416ANLT4G-VF01 ON Semiconductor, N-Channel 100V 19A (Tc) 71W (Tc) Surface Mount DPAK-3,
View
BUK7635-55A,118 Nexperia USA Inc., N-Channel 55V 35A (Tc) 85W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
View
STD11N65M2 STMicroelectronics, N-Channel 650V 7A (Tc) 85W (Tc) Surface Mount DPAK, MDmesh™ II Plus
View
FQD13N10LTM ON Semiconductor, N-Channel 100V 10A (Tc) 2.5W (Ta), 40W (Tc) Surface Mount D-Pak, QFET®
View
PHP18NQ10T,127 Nexperia USA Inc., N-Channel 100V 18A (Tc) 79W (Tc) Through Hole TO-220AB, TrenchMOS™
View
STB35N65M5 STMicroelectronics, N-Channel 650V 27A (Tc) 160W (Tc) Surface Mount D2PAK, MDmesh™ V
View
HUF75329D3ST ON Semiconductor, N-Channel 55V 20A (Tc) 128W (Tc) Surface Mount TO-252AA, UltraFET™
View
SSM3K15ACT,L3F Toshiba Semiconductor and Storage, N-Channel 30V 100mA (Ta) 100mW (Ta) Surface Mount CST3, U-MOSIII
View
IPB65R150CFDATMA1 Infineon Technologies, N-Channel 650V 22.4A (Tc) 195.3W (Tc) Surface Mount D²PAK (TO-263AB), CoolMOS™
View
STP6N62K3 STMicroelectronics, N-Channel 620V 5.5A (Tc) 90W (Tc) Through Hole TO-220AB, SuperMESH3™
View
STFU13N80K5 STMicroelectronics, N-Channel 800V 12A (Tc) 35W (Tc) Through Hole TO-220FP, MDmesh™ K5
View
SIHB6N65E-GE3 Vishay Siliconix, N-Channel 650V 7A (Tc) 78W (Tc) Surface Mount D²PAK (TO-263),
View
SIHJ8N60E-T1-GE3 - Tags
English
