CSD19501KCS
CSD19501KCS
Part Number CSD19501KCS Description MOSFET N-CH 80V 100A TO220 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 80V 100A (Ta) 217W (Tc) Through Hole TO-220-3
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CSD19501KCS - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet CSD19501KCS Standard Package 50 Manufacturer Texas Instruments Series NexFET™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 100A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 6.6mOhm @ 60A, 10V Vgs(th) (Max) @ Id 3.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 40V FET Feature - Power Dissipation (Max) 217W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3
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