Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ ZXMN10B08E6TA

ZXMN10B08E6TA

ZXMN10B08E6TA

Part NumberZXMN10B08E6TA

ManufacturerDiodes Incorporated

DescriptionMOSFET N-CH 100V 1.6A SOT23-6

DatasheetZXMN10B08E6

Package / CaseSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 1.6A (Ta) 1.1W (Ta) Surface Mount SOT-26

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ZXMN10B08E6TA - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	ZXMN10B08E6
Standard Package	1
Manufacturer	Diodes Incorporated
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.3V, 10V
Rds On (Max) @ Id, Vgs	230mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.2nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	497pF @ 50V
FET Feature	-
Power Dissipation (Max)	1.1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-26
Package / Case	SOT-23-6

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ZXMN10B08E6TA - Tags

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