SISS42DN-T1-GE3
SISS42DN-T1-GE3
Part Number SISS42DN-T1-GE3 Description MOSFET N-CHAN 100V POWERPAK 1212 Package / Case PowerPAK® 1212-8SUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 11.8A (Ta), 40.5A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)
To learn about the specification of SISS42DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISS42DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISS42DN-T1-GE3.
We are offering SISS42DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SISS42DN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SISS42DN Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Gen IV Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 11.8A (Ta), 40.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V Rds On (Max) @ Id, Vgs 14.4mOhm @ 15A, 10V Vgs(th) (Max) @ Id 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1850pF @ 50V FET Feature - Power Dissipation (Max) 4.8W (Ta), 57W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8S (3.3x3.3) Package / Case PowerPAK® 1212-8S
SISS42DN-T1-GE3 - Related ProductsMore >>
FDD4N60NZ ON Semiconductor, N-Channel 600V 3.4A (Tc) 114W (Tc) Surface Mount DPAK, UniFET-II™
View
PHP23NQ11T,127 Nexperia USA Inc., N-Channel 110V 23A (Tc) 100W (Tc) Through Hole TO-220AB, TrenchMOS™
View
IRFR220NTRPBF Infineon Technologies, N-Channel 200V 5A (Tc) 43W (Tc) Surface Mount D-Pak, HEXFET®
View
IRFR3910TRPBF Infineon Technologies, N-Channel 100V 16A (Tc) 79W (Tc) Surface Mount D-Pak, HEXFET®
View
RUM001L02T2CL Rohm Semiconductor, N-Channel 20V 100mA (Ta) 150mW (Ta) Surface Mount VMT3,
View
STW18N60DM2 STMicroelectronics, N-Channel 600V 12A (Tc) 90W (Tc) Through Hole TO-247, MDmesh™ DM2
View
FDB44N25TM ON Semiconductor, N-Channel 250V 44A (Tc) 307W (Tc) Surface Mount D²PAK, UniFET™
View
PSMN2R8-40BS,118 Nexperia USA Inc., N-Channel 40V 100A (Tc) 211W (Tc) Surface Mount D2PAK,
View
FK4B01100L1 Panasonic Electronic Components, N-Channel 12V 3.4A (Ta) 360mW (Ta) Surface Mount XLGA004-W-0808-RA01,
View
FCPF099N65S3 ON Semiconductor, N-Channel 650V 30A (Tc) 43W (Tc) Through Hole TO-220F, SuperFET® III
View
SI8810EDB-T2-E1 Vishay Siliconix, N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®
View
BSP320SH6327XTSA1 Infineon Technologies, N-Channel 60V 2.9A (Tj) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS™
View
SISS42DN-T1-GE3 - Tags
English
