TSM900N06CW RPG
TSM900N06CW RPG
Part Number TSM900N06CW RPG
Description MOSFET N-CHANNEL 60V 11A SOT223
Package / Case TO-261-4, TO-261AA
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Lead Time To be Confirmed
Detailed Description N-Channel 60V 11A (Tc) 25W (Tc) Surface Mount SOT-223
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TSM900N06CW RPG - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TSM900N06
Standard Package 1
Manufacturer Taiwan Semiconductor Corporation
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.3nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 500pF @ 15V
FET Feature -
Power Dissipation (Max) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
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