SIDR668DP-T1-GE3
SIDR668DP-T1-GE3
Part Number SIDR668DP-T1-GE3
Description MOSFET N-CH 100V
Package / Case PowerPAK® SO-8
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 100V 23.2A (Ta), 95A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
To learn about the specification of SIDR668DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIDR668DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIDR668DP-T1-GE3.
We are offering SIDR668DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIDR668DP-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIDR668DP
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET® Gen IV
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 23.2A (Ta), 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 108nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5400pF @ 50V
FET Feature -
Power Dissipation (Max) 6.25W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8DC
Package / Case PowerPAK® SO-8
SIDR668DP-T1-GE3 - Related ProductsMore >>
SIE810DF-T1-GE3
Vishay Siliconix, N-Channel 20V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L), TrenchFET®
View
IXTA3N120TRL
IXYS, N-Channel 1200V 3A (Tc) 200W (Tc) Surface Mount TO-263 (IXTA),
View
FDH45N50F-F133
ON Semiconductor, N-Channel 500V 45A (Tc) 625W (Tc) Through Hole TO-247-3, UniFET™
View
FDB031N08
ON Semiconductor, N-Channel 75V 120A (Tc) 375W (Tc) Surface Mount D²PAK, PowerTrench®
View
IPP65R045C7XKSA1
Infineon Technologies, N-Channel 650V 46A (Tc) 227W (Tc) Through Hole PG-TO220-3, CoolMOS™ C7
View
2N7002BKW,115
Nexperia USA Inc., N-Channel 60V 310mA (Ta) 275mW (Ta) Surface Mount SC-70, Automotive, AEC-Q101, TrenchMOS™
View
BSP300H6327XUSA1
Infineon Technologies, N-Channel 800V 190mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®
View
IGT60R190D1SATMA1
Infineon Technologies, N-Channel 600V 12.5A (Tc) 55.5W (Tc) Surface Mount PG-HSOF-8-3, CoolGaN™
View
SI1330EDL-T1-E3
Vishay Siliconix, N-Channel 60V 240mA (Ta) 280mW (Ta) Surface Mount SC-70-3, TrenchFET®
View
SQR40030ER_GE3
Vishay Siliconix, Surface Mount TO-252 (DPAK),
View
SSM3K361R,LF
Toshiba Semiconductor and Storage, N-Channel 100V 3.5A (Ta) 1.2W (Ta) Surface Mount SOT-23F, U-MOSVIII-H
View
SQJ464EP-T1_GE3
Vishay Siliconix, N-Channel 60V 32A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8,
View
SIDR668DP-T1-GE3 - Tags