SIDR668DP-T1-GE3
SIDR668DP-T1-GE3
Part Number SIDR668DP-T1-GE3 Description MOSFET N-CH 100V Package / Case PowerPAK® SO-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 23.2A (Ta), 95A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
To learn about the specification of SIDR668DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIDR668DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIDR668DP-T1-GE3.
We are offering SIDR668DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIDR668DP-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIDR668DP Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Gen IV Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 23.2A (Ta), 95A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V Rds On (Max) @ Id, Vgs 4.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 108nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5400pF @ 50V FET Feature - Power Dissipation (Max) 6.25W (Ta), 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8DC Package / Case PowerPAK® SO-8
SIDR668DP-T1-GE3 - Related ProductsMore >>
FK6K02010L Panasonic Electronic Components, N-Channel 20V 4.5A (Ta) 700mW (Ta) Surface Mount WSMini6-F1-B,
View
FCH041N60E ON Semiconductor, N-Channel 600V 77A (Tc) 592W (Tc) Through Hole TO-247-3, SuperFET® II
View
DMN33D8LT-13 Diodes Incorporated, N-Channel 30V 115mA (Ta) 240mW (Ta) Surface Mount SOT-523,
View
IRFB7545PBF Infineon Technologies, N-Channel 60V 95A (Tc) 125W (Tc) Through Hole TO-220, HEXFET®, StrongIRFET™
View
TSM090N03ECP ROG Taiwan Semiconductor Corporation, N-Channel 30V 50A (Tc) 40W (Tc) Surface Mount TO-252, (D-Pak),
View
ZVN2120GTA Diodes Incorporated, N-Channel 200V 320mA (Ta) 2W (Ta) Surface Mount SOT-223,
View
FDS6612A ON Semiconductor, N-Channel 30V 8.4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
STP36N55M5 STMicroelectronics, N-Channel 550V 33A (Tc) 190W (Tc) Through Hole TO-220, MDmesh™ V
View
FCA47N60 ON Semiconductor, N-Channel 600V 47A (Tc) 417W (Tc) Through Hole TO-3PN, SuperFET™
View
STI6N62K3 STMicroelectronics, N-Channel 620V 5.5A (Tc) 90W (Tc) Through Hole I2PAK, SuperMESH3™
View
STW24N60DM2 STMicroelectronics, N-Channel 600V 18A (Tc) 150W (Tc) Through Hole TO-247, FDmesh™ II Plus
View
DMT36M1LPS-13 Diodes Incorporated, N-Channel 30V 65A (Tc) 2.6W (Ta) Surface Mount PowerDI5060-8,
View
SIDR668DP-T1-GE3 - Tags
English
