Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ TPW1R306PL,L1Q

TPW1R306PL,L1Q

TPW1R306PL,L1Q

Part NumberTPW1R306PL,L1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionX35 PB-F POWER MOSFET TRANSISTOR

DatasheetTPW1R306PL Datasheet

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 260A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-DSOP Advance

To learn about the specification of TPW1R306PL,L1Q, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TPW1R306PL,L1Q with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TPW1R306PL,L1Q.
We are offering TPW1R306PL,L1Q for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TPW1R306PL,L1Q - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TPW1R306PL Datasheet
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSIX-H
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	260A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.29mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	91nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8100pF @ 30V
FET Feature	-
Power Dissipation (Max)	960mW (Ta), 170W (Tc)
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	8-DSOP Advance
Package / Case	8-PowerVDFN

TPW1R306PL,L1Q - Related Products

	FCP190N65S3	ON Semiconductor, N-Channel 650V 17A (Tc) 144W (Tc) Through Hole TO-220-3, SuperFET® III	View
	STP15NK50Z	STMicroelectronics, N-Channel 500V 14A (Tc) 160W (Tc) Through Hole TO-220AB, SuperMESH™	View
	PSMN012-80BS,118	Nexperia USA Inc., N-Channel 80V 74A (Tc) 148W (Tc) Surface Mount D2PAK,	View
	PHP20N06T,127	Nexperia USA Inc., N-Channel 55V 20.3A (Tc) 62W (Tc) Through Hole TO-220AB, TrenchMOS™	View
	BUK964R7-80E,118	Nexperia USA Inc., N-Channel 80V 120A (Tc) 324W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	FQA40N25	ON Semiconductor, N-Channel 250V 40A (Tc) 280W (Tc) Through Hole TO-3PN, QFET®	View
	IRFH5301TRPBF	Infineon Technologies, N-Channel 30V 35A (Ta), 100A (Tc) 3.6W (Ta) Surface Mount 8-PQFN (5x6), HEXFET®	View
	STW56N65M2	STMicroelectronics, N-Channel 650V 49A (Tc) 358W (Tc) Through Hole TO-247, MDmesh™ M2	View
	IRFS4410ZTRLPBF	Infineon Technologies, N-Channel 100V 97A (Tc) 230W (Tc) Surface Mount D2PAK, HEXFET®	View
	CSD17310Q5A	Texas Instruments, N-Channel 30V 21A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSONP (5x6), NexFET™	View
	IPP60R180P7XKSA1	Infineon Technologies, N-Channel 650V 18A (Tc) 72W (Tc) Through Hole PG-TO220-3, CoolMOS™ P7	View
	AOTF66920L	Alpha & Omega Semiconductor Inc., N-Channel 100V 22.5A (Ta), 41A (Tc) 8.3W (Ta), 27.5W (Tc) Through Hole TO-220F, AlphaSGT™	View

TPW1R306PL,L1Q - Tags

TPW1R306PL,L1Q TPW1R306PL,L1Q PDF TPW1R306PL,L1Q datasheet TPW1R306PL,L1Q specification TPW1R306PL,L1Q image TPW1R306PL,L1Q India Renesas Electronics India TPW1R306PL,L1Q buy TPW1R306PL,L1Q TPW1R306PL,L1Q price TPW1R306PL,L1Q distributor TPW1R306PL,L1Q supplier TPW1R306PL,L1Q wholesales