IRLR3410TRPBF
IRLR3410TRPBF
Part Number IRLR3410TRPBF Description MOSFET N-CH 100V 17A DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 17A (Tc) 79W (Tc) Surface Mount D-Pak
To learn about the specification of IRLR3410TRPBF, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IRLR3410TRPBF with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IRLR3410TRPBF.
We are offering IRLR3410TRPBF for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IRLR3410TRPBF - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRLR/U3410PbF Standard Package 1 Manufacturer Infineon Technologies Series HEXFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 17A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 105mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 34nC @ 5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V FET Feature - Power Dissipation (Max) 79W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR3410TRPBF - Related ProductsMore >>
IPB009N03LGATMA1 Infineon Technologies, N-Channel 30V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3, OptiMOS™
View
IPZ60R099C7XKSA1 Infineon Technologies, N-Channel 600V 22A (Tc) 110W (Tc) Through Hole PG-TO247-4, CoolMOS™ C7
View
BSS127H6327XTSA2 Infineon Technologies, N-Channel 600V 21mA (Ta) 500mW (Ta) Surface Mount SOT-23-3, SIPMOS®
View
IRFB31N20DPBF Infineon Technologies, N-Channel 200V 31A (Tc) 3.1W (Ta), 200W (Tc) Through Hole TO-220AB, HEXFET®
View
IPB042N03LGATMA1 Infineon Technologies, N-Channel 30V 70A (Tc) 79W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
View
SSM3K17FU,LF Toshiba Semiconductor and Storage, N-Channel 50V 100mA (Ta) 150mW (Ta) Surface Mount USM, π-MOSV
View
NVS4001NT1G ON Semiconductor, N-Channel 30V 270mA (Ta) 330mW (Ta) Surface Mount SC-70-3 (SOT323),
View
CSD17381F4T Texas Instruments, N-Channel 30V 3.1A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™
View
IRFBF20STRLPBF Vishay Siliconix, N-Channel 900V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Surface Mount D2PAK,
View
SIR818DP-T1-GE3 Vishay Siliconix, N-Channel 30V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
STD16N60M2 STMicroelectronics, N-Channel 600V 12A (Tc) 110W (Tc) Surface Mount DPAK, MDmesh™ M2
View
SIR610DP-T1-RE3 Vishay Siliconix, N-Channel 200V 35.4A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8, ThunderFET®
View
IRLR3410TRPBF - Tags
English
