TK31N60X,S1F


TK31N60X,S1F

Part NumberTK31N60X,S1F

Manufacturer

Description

Datasheet

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

TK31N60X,S1F - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package30
ManufacturerToshiba Semiconductor and Storage
SeriesDTMOSIV-H
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs88mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id3.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs65nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3000pF @ 300V
FET FeatureSuper Junction
Power Dissipation (Max)230W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3

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TK31N60X,S1F - Tags

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