Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRF100(B,S)201
Standard Package	1
Manufacturer	Infineon Technologies
Series	HEXFET®, StrongIRFET™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	192A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.2mOhm @ 115A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	255nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	9500pF @ 50V
FET Feature	-
Power Dissipation (Max)	441W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263AB)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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IXFP22N60P3	IXYS, N-Channel 600V 22A (Tc) 500W (Tc) Through Hole TO-220AB, HiPerFET™, Polar3™	View
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RCD100N19TL	Rohm Semiconductor, N-Channel 190V 10A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3,	View
RSH065N06TB1	Rohm Semiconductor, N-Channel 60V 6.5A (Ta) 2W (Ta) Surface Mount 8-SOP,	View
STP28N60M2	STMicroelectronics, N-Channel 600V 24A (Tc) 170W (Tc) Through Hole TO-220, MDmesh™ II Plus	View
NDB5060L	ON Semiconductor, N-Channel 60V 26A (Tc) 68W (Tc) Surface Mount D²PAK (TO-263AB),	View
IRLB4132PBF	Infineon Technologies, N-Channel 30V 78A (Tc) 140W (Tc) Through Hole TO-220AB, HEXFET®	View
FQP2N90	ON Semiconductor, N-Channel 900V 2.2A (Tc) 85W (Tc) Through Hole TO-220-3, QFET®	View
SUM90330E-GE3	Vishay Siliconix, N-Channel 200V 35.1A (Tc) 125W (Tc) Surface Mount TO-263 (D²Pak), ThunderFET®	View
STB30N65M5	STMicroelectronics, N-Channel 650V 22A (Tc) 140W (Tc) Surface Mount D2PAK, MDmesh™ V	View
DMNH6012LK3Q-13	Diodes Incorporated, N-Channel 60V 80A (Tc) 2W (Ta) Surface Mount TO-252-4L, Automotive, AEC-Q101	View

IRF100S201

Part NumberIRF100S201