Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQP120N10-09_GE3

SQP120N10-09_GE3

SQP120N10-09_GE3

Part NumberSQP120N10-09_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 120A TO220AB

DatasheetSQP120N10-09

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 120A (Tc) 375W (Tc) Through Hole TO-220AB

To learn about the specification of SQP120N10-09_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQP120N10-09_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQP120N10-09_GE3.
We are offering SQP120N10-09_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQP120N10-09_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQP120N10-09
Standard Package	500
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	9.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	180nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8645pF @ 25V
FET Feature	-
Power Dissipation (Max)	375W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

SQP120N10-09_GE3 - Related Products

	IXFX240N25X3	IXYS, N-Channel 250V 240A (Tc) 1250W (Tc) Through Hole PLUS247™-3, HiPerFET™	View
	IRL1404ZSTRLPBF	Infineon Technologies, N-Channel 40V 75A (Tc) 230W (Tc) Surface Mount D2PAK, HEXFET®	View
	SI2316BDS-T1-GE3	Vishay Siliconix, N-Channel 30V 4.5A (Tc) 1.25W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	IPB65R150CFDATMA1	Infineon Technologies, N-Channel 650V 22.4A (Tc) 195.3W (Tc) Surface Mount D²PAK (TO-263AB), CoolMOS™	View
	FDS6612A	ON Semiconductor, N-Channel 30V 8.4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	STD150N3LLH6	STMicroelectronics, N-Channel 30V 80A (Tc) 110W (Tc) Surface Mount DPAK, DeepGATE™, STripFET™ VI	View
	IXFA56N30X3	IXYS, N-Channel 300V 56A (Tc) 320W (Tc) Surface Mount TO-263AA, HiPerFET™	View
	NDB5060L	ON Semiconductor, N-Channel 60V 26A (Tc) 68W (Tc) Surface Mount D²PAK (TO-263AB),	View
	TSM130NB06LCR RLG	Taiwan Semiconductor Corporation, N-Channel 60V 10A (Ta), 51A (Tc) 3.1W (Ta), 83W (Tc) Surface Mount 8-PDFN (5x6),	View
	IXFN150N65X2	IXYS, N-Channel 650V 145A (Tc) 1040W (Tc) Chassis Mount SOT-227B, HiPerFET™	View
	FDMC86102L	ON Semiconductor, N-Channel 100V 7A (Ta), 18A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
	IPL60R105P7AUMA1	Infineon Technologies, N-Channel 650V 33A (Tc) 137W (Tc) Surface Mount PG-VSON-4, CoolMOS™ P7	View

SQP120N10-09_GE3 - Tags

SQP120N10-09_GE3 SQP120N10-09_GE3 PDF SQP120N10-09_GE3 datasheet SQP120N10-09_GE3 specification SQP120N10-09_GE3 image SQP120N10-09_GE3 India Renesas Electronics India SQP120N10-09_GE3 buy SQP120N10-09_GE3 SQP120N10-09_GE3 price SQP120N10-09_GE3 distributor SQP120N10-09_GE3 supplier SQP120N10-09_GE3 wholesales