Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TK31E60X
Standard Package	50
Manufacturer	Toshiba Semiconductor and Storage
Series	DTMOSIV-H
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	88mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	3000pF @ 300V
FET Feature	Super Junction
Power Dissipation (Max)	230W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3

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CSD18502KCS	Texas Instruments, N-Channel 40V 100A (Tc) 259W (Tc) Through Hole TO-220-3, NexFET™	View
IRFS4127TRLPBF	Infineon Technologies, N-Channel 200V 72A (Tc) 375W (Tc) Surface Mount D2PAK, HEXFET®	View
DN2450K4-G	Microchip Technology, N-Channel 500V 350mA (Tj) 2.5W (Ta) Surface Mount TO-252, (D-Pak),	View
MMBF170	ON Semiconductor, N-Channel 60V 500mA (Ta) 300mW (Ta) Surface Mount SOT-23,	View
IPT65R105G7XTMA1	Infineon Technologies, N-Channel 650V 24A (Tc) 156W (Tc) Surface Mount PG-HSOF-8-2, CoolMOS™ C7	View

TK31E60X,S1X

Part NumberTK31E60X,S1X