Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ BSC010N04LSIATMA1

BSC010N04LSIATMA1

BSC010N04LSIATMA1

Part NumberBSC010N04LSIATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 40V 37A 8TDSON

DatasheetBSC010N04LSI

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 37A (Ta), 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8 FL

To learn about the specification of BSC010N04LSIATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSC010N04LSIATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSC010N04LSIATMA1.
We are offering BSC010N04LSIATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

BSC010N04LSIATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	BSC010N04LSI
Standard Package	1
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	37A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.05mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	87nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6200pF @ 20V
FET Feature	Schottky Diode (Body)
Power Dissipation (Max)	2.5W (Ta), 139W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8 FL
Package / Case	8-PowerTDFN

BSC010N04LSIATMA1 - Related Products

	IPL60R285P7AUMA1	Infineon Technologies, N-Channel 650V 13A (Tc) 59W (Tc) Surface Mount PG-VSON-4, CoolMOS™ P7	View
	FQB33N10LTM	ON Semiconductor, N-Channel 100V 33A (Tc) 3.75W (Ta), 127W (Tc) Surface Mount D²PAK (TO-263AB), QFET®	View
	R6030KNX	Rohm Semiconductor, N-Channel 600V 30A (Tc) 86W (Tc) Through Hole TO-220FM,	View
	DMN3020UTS-13	Diodes Incorporated, N-Channel 30V 15A (Tc) 1.4W (Ta) Surface Mount 8-TSSOP,	View
	STP15N65M5	STMicroelectronics, N-Channel 650V 11A (Tc) 125W (Tc) Through Hole TO-220, MDmesh™ V	View
	NTMS4816NR2G	ON Semiconductor, N-Channel 30V 6.8A (Ta) 780mW (Ta) Surface Mount 8-SOIC,	View
	FDB86102LZ	ON Semiconductor, N-Channel 100V 8.3A (Ta), 30A (Tc) 3.1W (Ta) Surface Mount TO-263AB, PowerTrench®	View
	MMIX1F520N075T2	IXYS, N-Channel 75V 500A (Tc) 830W (Tc) Surface Mount 24-SMPD, GigaMOS™, TrenchT2™	View
	DMN2028UFDF-7	Diodes Incorporated, N-Channel 20V 7.9A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type F),	View
	IRF510STRRPBF	Vishay Siliconix, N-Channel 100V 5.6A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount TO-263 (D²Pak),	View
	SQD40030E_GE3	Vishay Siliconix, N-Channel 40V Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®	View
	R8008ANJFRGTL	Rohm Semiconductor, N-Channel 800V 8A (Tc) 195W (Tc) Surface Mount LPTS, Automotive, AEC-Q101	View

BSC010N04LSIATMA1 - Tags

BSC010N04LSIATMA1 BSC010N04LSIATMA1 PDF BSC010N04LSIATMA1 datasheet BSC010N04LSIATMA1 specification BSC010N04LSIATMA1 image BSC010N04LSIATMA1 India Renesas Electronics India BSC010N04LSIATMA1 buy BSC010N04LSIATMA1 BSC010N04LSIATMA1 price BSC010N04LSIATMA1 distributor BSC010N04LSIATMA1 supplier BSC010N04LSIATMA1 wholesales