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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK762R9-40E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 79nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6200pF @ 25V
FET Feature -
Power Dissipation (Max) 234W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FDT86106LZ
ON Semiconductor, N-Channel 100V 3.2A (Ta) 2.2W (Ta) Surface Mount SOT-223-4, PowerTrench®
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BSZ036NE2LSATMA1
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FDMS86105
ON Semiconductor, N-Channel 100V 6A (Ta), 26A (Tc) 2.5W (Ta), 48W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®
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BUK7240-100A,118
Nexperia USA Inc., N-Channel 100V 34A (Tc) 114W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™
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IRF640NLPBF
Infineon Technologies, N-Channel 200V 18A (Tc) 150W (Tc) Through Hole TO-262, HEXFET®
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BSB015N04NX3GXUMA1
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STP24N60DM2
STMicroelectronics, N-Channel 600V 18A (Tc) 150W (Tc) Through Hole TO-220, FDmesh™ II Plus
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NTMFS08N003C
ON Semiconductor, N-Channel 80V 22A (Ta), 147A (Tc) 2.7W (Ta), 125W (Tc) Surface Mount Power56, PowerTrench®
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SIHD9N60E-GE3
Vishay Siliconix, N-Channel 600V 9A (Tc) 78W (Tc) Surface Mount D-PAK (TO-252AA),
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IXFT94N30P3
IXYS, N-Channel 300V 94A (Tc) 1040W (Tc) Surface Mount TO-268, HiPerFET™, Polar3™
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IPW60R190E6FKSA1
Infineon Technologies, N-Channel 600V 20.2A (Tc) 151W (Tc) Through Hole PG-TO247-3, CoolMOS™
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XR46000ESETR
MaxLinear, Inc., N-Channel 600V 1.5A (Tc) 20W (Tc) Surface Mount SOT-223,
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