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STY105NM50N

STY105NM50N

Part NumberSTY105NM50N

ManufacturerSTMicroelectronics

DescriptionMOSFET N-CH 500V 110A MAX247

DatasheetSTY105NM50N

Package / CaseTO-247-3

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Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 500V 110A (Tc) 625W (Tc) Through Hole MAX247™

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STY105NM50N - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	STY105NM50N
Standard Package	30
Manufacturer	STMicroelectronics
Series	MDmesh™ II
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	22mOhm @ 52A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	326nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	9600pF @ 100V
FET Feature	-
Power Dissipation (Max)	625W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	MAX247™
Package / Case	TO-247-3

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