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FDD8770

FDD8770

Part NumberFDD8770

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 25V 35A DPAK

DatasheetFDD8770

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 25V 35A (Tc) 115W (Tc) Surface Mount TO-252AA

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FDD8770 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FDD8770
Standard Package	1
Manufacturer	ON Semiconductor
Series	PowerTrench®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4mOhm @ 35A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	73nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3720pF @ 13V
FET Feature	-
Power Dissipation (Max)	115W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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