FDD8770
FDD8770
Part Number FDD8770 Description MOSFET N-CH 25V 35A DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 25V 35A (Tc) 115W (Tc) Surface Mount TO-252AA
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FDD8770 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDD8770 Standard Package 1 Manufacturer ON Semiconductor Series PowerTrench® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4mOhm @ 35A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3720pF @ 13V FET Feature - Power Dissipation (Max) 115W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252AA Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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