STQ2HNK60ZR-AP
STQ2HNK60ZR-AP
Part Number STQ2HNK60ZR-AP Description MOSFET N-CH 600V 0.5A TO-92 Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 500mA (Tc) 3W (Tc) Through Hole TO-92-3
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STQ2HNK60ZR-AP - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STx2HNK60Z(x) Standard Package 2000 Manufacturer STMicroelectronics Series SuperMESH™ Packaging Tape & Box (TB) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 500mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.8Ohm @ 1A, 10V Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 280pF @ 25V FET Feature - Power Dissipation (Max) 3W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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