STW11NM80
STW11NM80
Part Number STW11NM80
Description MOSFET N-CH 800V 11A TO-247
Package / Case TO-247-3
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Lead Time To be Confirmed
Detailed Description N-Channel 800V 11A (Tc) 150W (Tc) Through Hole TO-247-3
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STW11NM80 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STx11NM80
Standard Package 30
Manufacturer STMicroelectronics
Series MDmesh™
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 43.6nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1630pF @ 25V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
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