STI18N65M2

Part NumberSTI18N65M2

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	ST(I,P)18N65M2
Standard Package	50
Manufacturer	STMicroelectronics
Series	MDmesh™ M2
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	330mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	770pF @ 100V
FET Feature	-
Power Dissipation (Max)	110W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA

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IRFS7537TRLPBF	Infineon Technologies, N-Channel 60V 173A (Tc) 230W (Tc) Surface Mount D²PAK (TO-263AB), HEXFET®, StrongIRFET™	View
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IRLR120TRPBF	Vishay Siliconix, N-Channel 100V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
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