SI4114DY-T1-GE3

Part NumberSI4114DY-T1-GE3

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si4114DY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	95nC @ 10V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	3700pF @ 10V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 5.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

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IRFB3077PBF	Infineon Technologies, N-Channel 75V 120A (Tc) 370W (Tc) Through Hole TO-220AB, HEXFET®	View
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DMTH6005LK3Q-13	Diodes Incorporated, N-Channel 60V 90A (Tc) 2.1W (Ta), 100W (Tc) Surface Mount TO-252-4L, Automotive, AEC-Q101	View
SIHG24N65EF-GE3	Vishay Siliconix, N-Channel 650V 24A (Tc) 250W (Tc) Through Hole TO-247AC,	View
NTMFS4927NT1G	ON Semiconductor, N-Channel 30V 7.9A (Ta), 38A (Tc) 920mW (Ta), 20.8W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
TK20V60W5,LVQ	Toshiba Semiconductor and Storage, N-Channel 600V 20A (Ta) 156W (Tc) Surface Mount 4-DFN-EP (8x8), DTMOSIV	View
BUK9M7R2-40EX	Nexperia USA Inc., N-Channel 40V 70A (Tc) 79W (Tc) Surface Mount LFPAK33, Automotive, AEC-Q101, TrenchMOS™	View
IRFPS43N50KPBF	Vishay Siliconix, N-Channel 500V 47A (Tc) 540W (Tc) Through Hole SUPER-247™ (TO-274AA),	View
SI4134DY-T1-GE3	Vishay Siliconix, N-Channel 30V 14A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO, TrenchFET®	View
SPA17N80C3XKSA1	Infineon Technologies, N-Channel 800V 17A (Tc) 42W (Tc) Through Hole PG-TO220-3, CoolMOS™	View
TN0104N8-G	Microchip Technology, N-Channel 40V 630mA (Tj) 1.6W (Tc) Surface Mount TO-243AA (SOT-89),	View