Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4114DY-T1-GE3

SI4114DY-T1-GE3

SI4114DY-T1-GE3

Part NumberSI4114DY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 20A 8-SOIC

DatasheetSi4114DY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 20A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO

To learn about the specification of SI4114DY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4114DY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4114DY-T1-GE3.
We are offering SI4114DY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4114DY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si4114DY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	95nC @ 10V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	3700pF @ 10V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 5.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4114DY-T1-GE3 - Related Products

	TSM020N04LCR RLG	Taiwan Semiconductor Corporation, N-Channel 40V 170A (Tc) 104W (Tc) Surface Mount 8-PDFN (5x6),	View
	IRFP4229PBF	Infineon Technologies, N-Channel 250V 44A (Tc) 310W (Tc) Through Hole TO-247AC, HEXFET®	View
	IXFK80N60P3	IXYS, N-Channel 600V 80A (Tc) 1300W (Tc) Through Hole TO-264AA (IXFK), HiPerFET™, Polar3™	View
	STS26N3LLH6	STMicroelectronics, N-Channel 30V 26A (Tc) 2.7W (Ta) Surface Mount 8-SO, DeepGATE™, STripFET™ VI	View
	NTMFS4834NT1G	ON Semiconductor, N-Channel 30V 13A (Ta), 130A (Tc) 900mW (Ta), 86.2W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	FDS8882	ON Semiconductor, N-Channel 30V 9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	STP46N60M6	STMicroelectronics, N-Channel 600V 36A (Tc) 250W (Tc) Through Hole TO-220, MDmesh™ M6	View
	STD5N20LT4	STMicroelectronics, N-Channel 200V 5A (Tc) 33W (Tc) Surface Mount DPAK, STripFET™	View
	FDPF085N10A	ON Semiconductor, N-Channel 100V 40A (Tc) 33.3W (Tc) Through Hole TO-220F, PowerTrench®	View
	CSD18533Q5A	Texas Instruments, N-Channel 60V 17A (Ta), 100A (Tc) 3.2W (Ta), 116W (Tc) Surface Mount 8-VSONP (5x6), NexFET™	View
	NDS355AN	ON Semiconductor, N-Channel 30V 1.7A (Ta) 500mW (Ta) Surface Mount SuperSOT-3,	View
	FDMC86116LZ	ON Semiconductor, N-Channel 100V 3.3A (Ta), 7.5A (Tc) 2.3W (Ta), 19W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View

SI4114DY-T1-GE3 - Tags

SI4114DY-T1-GE3 SI4114DY-T1-GE3 PDF SI4114DY-T1-GE3 datasheet SI4114DY-T1-GE3 specification SI4114DY-T1-GE3 image SI4114DY-T1-GE3 India Renesas Electronics India SI4114DY-T1-GE3 buy SI4114DY-T1-GE3 SI4114DY-T1-GE3 price SI4114DY-T1-GE3 distributor SI4114DY-T1-GE3 supplier SI4114DY-T1-GE3 wholesales