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FCP190N60E

FCP190N60E

Part NumberFCP190N60E

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 600V TO220-3

DatasheetFCP(F)190N60E

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 20.6A (Tc) 208W (Tc) Through Hole TO-220-3

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FCP190N60E - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FCP(F)190N60E
Standard Package	800
Manufacturer	ON Semiconductor
Series	SuperFET® II
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	20.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	82nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3175pF @ 25V
FET Feature	-
Power Dissipation (Max)	208W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3

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