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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STx12N120K5(-2), STWA12N120K5
Standard Package 1
Manufacturer STMicroelectronics
Series MDmesh™ K5
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 690mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 44.2nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1370pF @ 100V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package H2Pak-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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IXYS, N-Channel 3000V 1A (Tc) 195W (Tc) Through Hole TO-247HV,
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SI7454DDP-T1-GE3
Vishay Siliconix, N-Channel 100V 21A (Tc) 4.1W (Ta), 29.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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