IPAN60R800CEXKSA1
IPAN60R800CEXKSA1
Part Number IPAN60R800CEXKSA1 Description MOSFET NCH 600V 8.4A TO220 Package / Case TO-220-3 Full PackUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 8.4A (Tc) 27W (Tc) Through Hole PG-TO220 Full Pack
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IPAN60R800CEXKSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPAN60R800CE Standard Package 500 Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 8.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 800mOhm @ 2A, 10V Vgs(th) (Max) @ Id 3.5V @ 170µA Gate Charge (Qg) (Max) @ Vgs 17.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 373pF @ 100V FET Feature Super Junction Power Dissipation (Max) 27W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220 Full Pack Package / Case TO-220-3 Full Pack
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