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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet Power MOSFET Selection Guide
Standard Package 1000
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, STripFET™ II
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5100pF @ 25V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PHB33NQ20T,118
Nexperia USA Inc., N-Channel 200V 32.7A (Tc) 230W (Tc) Surface Mount D2PAK, TrenchMOS™
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IRFP450LCPBF
Vishay Siliconix, N-Channel 500V 14A (Tc) 190W (Tc) Through Hole TO-247-3,
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FDC655BN
ON Semiconductor, N-Channel 30V 6.3A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®
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SIDR622DP-T1-GE3
Vishay Siliconix, N-Channel 150V 64.6A (Ta), 56.7A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC, TrenchFET®
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SI7848BDP-T1-GE3
Vishay Siliconix, N-Channel 40V 47A (Tc) 4.2W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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STU10N60M2
STMicroelectronics, N-Channel 600V 7.5A (Tc) 85W (Tc) Through Hole I-PAK, MDmesh™ II Plus
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TSM170N06CP ROG
Taiwan Semiconductor Corporation, N-Channel 60V 38A (Tc) 46W (Tc) Surface Mount TO-252, (D-Pak),
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PHB33NQ20T,118
Nexperia USA Inc., N-Channel 200V 32.7A (Tc) 230W (Tc) Surface Mount D2PAK, TrenchMOS™
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IRF740ASTRLPBF
Vishay Siliconix, N-Channel 400V 10A (Tc) 125W (Tc) Surface Mount,
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IRFB4410PBF
Infineon Technologies, N-Channel 100V 88A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®
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SIHP23N60E-GE3
Vishay Siliconix, N-Channel 600V 23A (Tc) 227W (Tc) Through Hole TO-220AB,
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IRFR320PBF
Vishay Siliconix, N-Channel 400V 3.1A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,
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