Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	STGYA120M65DF2AG
Standard Package	600
Manufacturer	STMicroelectronics
Series	M
Packaging	Tube
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	160A
Current - Collector Pulsed (Icm)	360A
Vce(on) (Max) @ Vge, Ic	2.15V @ 15V, 120A
Power - Max	625W
Switching Energy	1.8mJ (on), 4.41mJ (off)
Input Type	Standard
Gate Charge	420nC
Td (on/off) @ 25°C	66ns/185ns
Test Condition	400V, 120A, 4.7Ohm, 15V
Reverse Recovery Time (trr)	202ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	MAX247™

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APT35GP120BG	Microsemi Corporation, IGBT PT 1200V 96A 543W Through Hole TO-247 [B], POWER MOS 7®	View
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IXYH75N65C3H1	IXYS, IGBT PT 650V 170A 750W Through Hole TO-247 (IXYH), GenX3™, XPT™	View
FGA20N120FTDTU	ON Semiconductor, IGBT Trench Field Stop 1200V 40A 298W Through Hole TO-3P,	View
STGP7H60DF	STMicroelectronics, IGBT Trench Field Stop 600V 14A 88W Through Hole TO-220,	View
HGT1S10N120BNST	ON Semiconductor, IGBT NPT 1200V 35A 298W Surface Mount TO-263AB,	View
FGA40N65SMD	ON Semiconductor, IGBT Field Stop 650V 80A 349W Through Hole TO-3PN,	View
STGYA120M65DF2AG	STMicroelectronics, IGBT Trench Field Stop 650V 160A 625W Through Hole MAX247™,	View
APT75GN120LG	Microsemi Corporation, IGBT Trench Field Stop 1200V 200A 833W Through Hole TO-264 [L],	View

STGYA120M65DF2AG

Part NumberSTGYA120M65DF2AG