Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	NGTB75N65FL2WG
Standard Package	30
Manufacturer	ON Semiconductor
Series	-
Packaging	Tube
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	100A
Current - Collector Pulsed (Icm)	200A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 75A
Power - Max	595W
Switching Energy	1.5mJ (on), 1mJ (off)
Input Type	Standard
Gate Charge	310nC
Td (on/off) @ 25°C	110ns/270ns
Test Condition	400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr)	80ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247

IRGP4069DPBF	Infineon Technologies, IGBT Trench 600V 76A 268W Through Hole TO-247AC,	View
FGH40N60UFTU	ON Semiconductor, IGBT Field Stop 600V 80A 290W Through Hole TO-247-3,	View
IXBL60N360	IXYS, IGBT 3600V 92A 417W Through Hole ISOPLUSi5-Pak™, BIMOSFET™	View
IXYJ20N120C3D1	IXYS, IGBT 1200V 21A 105W Through Hole ISO247™, GenX3™, XPT™	View
RGTH80TK65DGC11	Rohm Semiconductor, IGBT Trench Field Stop 650V 31A 66W Through Hole TO-3PFM,	View
NGTB15N120IHRWG	ON Semiconductor, IGBT Trench Field Stop 1200V 30A 333W Through Hole TO-247,	View
RGT40NS65DGTL	Rohm Semiconductor, IGBT Trench Field Stop 650V 40A 161W Surface Mount LPDS (TO-263S),	View
STGB15M65DF2	STMicroelectronics, IGBT Trench Field Stop 650V 30A 136W Surface Mount D2PAK,	View
IXYX30N170CV1	IXYS, IGBT 1700V 108A 937W Through Hole PLUS247™-3, XPT™	View
IRG4PC30FDPBF	Infineon Technologies, IGBT 600V 31A 100W Through Hole TO-247AC,	View
NGTB20N135IHRWG	ON Semiconductor, IGBT Trench Field Stop 1350V 40A 394W Through Hole TO-247,	View
IXBK75N170	IXYS, IGBT 1700V 200A 1040W Through Hole TO-264, BIMOSFET™	View

NGTB75N65FL2WG

Part NumberNGTB75N65FL2WG