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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STD85N10F7AG Datasheet
Standard Package 2500
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, STripFET™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 50V
FET Feature -
Power Dissipation (Max) 85W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
FDS2582
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ON Semiconductor, N-Channel 650V 40A (Tc) 313W (Tc) Surface Mount D2PAK-3 (TO-263),
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Diodes Incorporated, N-Channel 60V 1.2A (Ta) 625mW (Ta) Surface Mount SOT-23-3,
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Infineon Technologies, N-Channel 200V 56A (Tc) 380W (Tc) Through Hole TO-220AB, HEXFET®
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IXYS, N-Channel 200V 90A (Tc) 390W (Tc) Through Hole TO-247, HiPerFET™
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Infineon Technologies, N-Channel 55V 56A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®
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Texas Instruments, N-Channel 100V 14.4A (Ta) 2.5W (Ta), 20.2W (Tc) Surface Mount 6-WSON (2x2), NexFET™
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