BSC016N04LSGATMA1
BSC016N04LSGATMA1
Part Number BSC016N04LSGATMA1 Description MOSFET N-CH 40V 100A TDSON-8 Package / Case 8-PowerTDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 40V 31A (Ta), 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8-1
To learn about the specification of BSC016N04LSGATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSC016N04LSGATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSC016N04LSGATMA1.
We are offering BSC016N04LSGATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
BSC016N04LSGATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSC016N04LS G Standard Package 5000 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 31A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.6mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 85µA Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 12000pF @ 20V FET Feature - Power Dissipation (Max) 2.5W (Ta), 139W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TDSON-8-1 Package / Case 8-PowerTDFN
BSC016N04LSGATMA1 - Related ProductsMore >>
IRF3205ZSTRLPBF Infineon Technologies, N-Channel 55V 75A (Tc) 170W (Tc) Surface Mount D2PAK, HEXFET®
View
FQT7N10LTF ON Semiconductor, N-Channel 100V 1.7A (Tc) 2W (Tc) Surface Mount SOT-223-4, QFET®
View
RQ3E160ADTB Rohm Semiconductor, N-Channel 30V 16A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3),
View
APT106N60B2C6 Microsemi Corporation, N-Channel 600V 106A (Tc) 833W (Tc) Through Hole T-MAX™ [B2], CoolMOS™
View
APT37M100L Microsemi Corporation, N-Channel 1000V 37A (Tc) 1135W (Tc) Through Hole TO-264,
View
PSMN013-100BS,118 Nexperia USA Inc., N-Channel 100V 68A (Tc) 170W (Tc) Surface Mount D2PAK,
View
IRFR3707ZTRPBF Infineon Technologies, N-Channel 30V 56A (Tc) 50W (Tc) Surface Mount D-Pak, HEXFET®
View
FDMC2610 ON Semiconductor, N-Channel 200V 2.2A (Ta), 9.5A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount 8-MLP (3.3x3.3), UniFET™
View
IXFR64N60Q3 IXYS, N-Channel 600V 42A (Tc) 568W (Tc) Through Hole ISOPLUS247™, HiPerFET™
View
ZXMN2A14FTA Diodes Incorporated, N-Channel 20V 3.4A (Ta) 1W (Ta) Surface Mount SOT-23-3,
View
IRLR3705ZTRPBF Infineon Technologies, N-Channel 55V 42A (Tc) 130W (Tc) Surface Mount D-Pak, HEXFET®
View
FQB50N06TM ON Semiconductor, N-Channel 60V 50A (Tc) 3.75W (Ta), 120W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
View
BSC016N04LSGATMA1 - Tags
English
