CSD19538Q2T


CSD19538Q2T

Part NumberCSD19538Q2T

Manufacturer

Description

Datasheet

Package / Case6-WDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

CSD19538Q2T - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerTexas Instruments
SeriesNexFET™
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C13.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs59mOhm @ 5A, 10V
Vgs(th) (Max) @ Id3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.6nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds454pF @ 50V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 20.2W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-WSON (2x2)
Package / Case6-WDFN Exposed Pad

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