CSD19538Q2T
CSD19538Q2T
Part Number CSD19538Q2T Description MOSFET NCH 100V 13.1A 6WSON Package / Case 6-WDFN Exposed PadUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 13.1A (Tc) 2.5W (Ta), 20.2W (Tc) Surface Mount 6-WSON (2x2)
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CSD19538Q2T - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet CSD19538Q2 Datasheet Standard Package 1 Manufacturer Texas Instruments Series NexFET™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 13.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 59mOhm @ 5A, 10V Vgs(th) (Max) @ Id 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 454pF @ 50V FET Feature - Power Dissipation (Max) 2.5W (Ta), 20.2W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-WSON (2x2) Package / Case 6-WDFN Exposed Pad
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