STD2HNK60Z-1
STD2HNK60Z-1
Part Number STD2HNK60Z-1
Description MOSFET N-CH 600V 2A IPAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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Lead Time To be Confirmed
Detailed Description N-Channel 600V 2A (Tc) 45W (Tc) Through Hole I-PAK
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STD2HNK60Z-1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STx2HNK60Z(x)
Standard Package 75
Manufacturer STMicroelectronics
Series SuperMESH™
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 25V
FET Feature -
Power Dissipation (Max) 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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