SIHB21N65EF-GE3
SIHB21N65EF-GE3
Part Number SIHB21N65EF-GE3 Description MOSFET N-CH 650V 21A D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 21A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263)
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SIHB21N65EF-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIHB21N65EF Standard Package 1000 Manufacturer Vishay Siliconix Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 106nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2322pF @ 100V FET Feature - Power Dissipation (Max) 208W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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