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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STx120N4LF6
Standard Package 2500
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 25V
FET Feature -
Power Dissipation (Max) 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
FDS3672
ON Semiconductor, N-Channel 100V 7.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
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BUK7Y28-75B,115
Nexperia USA Inc., N-Channel 75V 35.5A (Tc) 85W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™
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CSD18504KCS
Texas Instruments, N-Channel 40V 53A (Ta), 100A (Tc) 115W (Tc) Through Hole TO-220-3, NexFET™
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SIR878BDP-T1-RE3
Vishay Siliconix, N-Channel 100V 12A (Ta), 42.5A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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SQD40N10-25_GE3
Vishay Siliconix, N-Channel 100V 40A (Tc) 136W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®
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IPW60R040CFD7XKSA1
Infineon Technologies, N-Channel 600V 50A (Tc) 227W (Tc) Through Hole PG-TO247-3, OptiMOS™
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ZVN2106GTA
Diodes Incorporated, N-Channel 60V 710mA (Ta) 2W (Ta) Surface Mount SOT-223,
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IPA80R450P7XKSA1
Infineon Technologies, N-Channel 800V 11A (Tc) 29W (Tc) Through Hole TO-220-3F, CoolMOS™
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IXFH40N85X
IXYS, N-Channel 850V 40A (Tc) 860W (Tc) Through Hole TO-247, HiPerFET™
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SQP120N06-6M7_GE3
Vishay Siliconix, Through Hole TO-220AB,
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MCU04N60-TP
Micro Commercial Co, N-Channel 600V 4A Surface Mount D-Pak,
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BSP89H6327XTSA1
Infineon Technologies, N-Channel 240V 350mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®
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