RS1E280BNTB
RS1E280BNTB
Part Number RS1E280BNTB Description MOSFET N-CH 30V 28A 8HSOP Package / Case 8-PowerTDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 28A (Ta) 3W (Ta), 30W (Tc) Surface Mount 8-HSOP
To learn about the specification of RS1E280BNTB, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RS1E280BNTB with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RS1E280BNTB.
We are offering RS1E280BNTB for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
RS1E280BNTB - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet RS1E280BN Standard Package 2500 Manufacturer Rohm Semiconductor Series - Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 28A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.3mOhm @ 28A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 94nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5100pF @ 15V FET Feature - Power Dissipation (Max) 3W (Ta), 30W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-HSOP Package / Case 8-PowerTDFN
RS1E280BNTB - Related ProductsMore >>
STL10N60M6 STMicroelectronics, N-Channel 600V 5.5A (Tc) 48W (Tc) Surface Mount PowerFlat™ (5x6) HV, MDmesh™ M6
View
DMN2230U-7 Diodes Incorporated, N-Channel 20V 2A (Ta) 600mW (Ta) Surface Mount SOT-23-3,
View
RJK0855DPB-00#J5 Renesas Electronics America, N-Channel 80V 30A (Ta) 60W (Tc) Surface Mount LFPAK,
View
IRF1104PBF Infineon Technologies, N-Channel 40V 100A (Tc) 170W (Tc) Through Hole TO-220AB, HEXFET®
View
IXTP3N100D2 IXYS, N-Channel 1000V 3A (Tc) 125W (Tc) Through Hole TO-220AB,
View
ZXMN6A11GTA Diodes Incorporated, N-Channel 60V 3.1A (Ta) 2W (Ta) Surface Mount SOT-223,
View
TSM2N60ECH C5G Taiwan Semiconductor Corporation, N-Channel 600V 2A (Tc) 52.1W (Tc) Through Hole TO-251 (IPAK),
View
FQB19N20LTM ON Semiconductor, N-Channel 200V 21A (Tc) 3.13W (Ta), 140W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
View
SI8424CDB-T1-E1 Vishay Siliconix, N-Channel 8V 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot, TrenchFET®
View
TSM4806CS RLG Taiwan Semiconductor Corporation, N-Channel 20V 28A (Ta) 2W (Ta) Surface Mount 8-SOP,
View
IRFL110TRPBF Vishay Siliconix, N-Channel 100V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223,
View
SIHG73N60AE-GE3 Vishay Siliconix, N-Channel 600V 60A (Tc) 417W (Tc) Through Hole TO-247AC,
View
RS1E280BNTB - Tags
English
