Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SSM3H137TU
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSIV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	34V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	240mOhm @ 1A, 10V
Vgs(th) (Max) @ Id	1.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	3nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	119pF @ 10V
FET Feature	-
Power Dissipation (Max)	800mW (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	UFM
Package / Case	3-SMD, Flat Leads

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TSM090N03ECP ROG	Taiwan Semiconductor Corporation, N-Channel 30V 50A (Tc) 40W (Tc) Surface Mount TO-252, (D-Pak),	View

SSM3H137TU,LF

Part NumberSSM3H137TU,LF