Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ TPN1R603PL,L1Q

TPN1R603PL,L1Q

TPN1R603PL,L1Q

Part NumberTPN1R603PL,L1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionX35 PB-F POWER MOSFET TRANSISTOR

DatasheetTPN1R603PL

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 80A (Tc) 104W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)

To learn about the specification of TPN1R603PL,L1Q, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TPN1R603PL,L1Q with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TPN1R603PL,L1Q.
We are offering TPN1R603PL,L1Q for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TPN1R603PL,L1Q - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TPN1R603PL
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSIX-H
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	2.1V @ 300µA
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3900pF @ 15V
FET Feature	-
Power Dissipation (Max)	104W (Tc)
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-PowerVDFN

TPN1R603PL,L1Q - Related Products

	IRF2807ZSTRLPBF	Infineon Technologies, N-Channel 75V 75A (Tc) 170W (Tc) Surface Mount D2PAK, HEXFET®	View
	FCPF20N60	ON Semiconductor, N-Channel 600V 20A (Tc) 39W (Tc) Through Hole TO-220F, SuperFET™	View
	APT8M100B	Microsemi Corporation, N-Channel 1000V 8A (Tc) 290W (Tc) Through Hole TO-247 [B],	View
	SIHG33N65EF-GE3	Vishay Siliconix, N-Channel 650V 31.6A (Tc) 313W (Tc) Through Hole TO-247AC,	View
	IXTH130N15X4	IXYS, N-Channel 150V 130A (Tc) 400W (Tc) Through Hole TO-247,	View
	SI7112DN-T1-GE3	Vishay Siliconix, N-Channel 30V 11.3A (Tc) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	RCD080N25TL	Rohm Semiconductor, N-Channel 250V 8A (Ta) 850mW (Ta), 20W (Tc) Surface Mount CPT3,	View
	AOUS66923	Alpha & Omega Semiconductor Inc., N-Channel 100V 16.5A (Ta), 58A (Tc) 6.2W (Ta), 73W (Tc) Surface Mount UltraSO-8™, AlphaSGT™	View
	SIRA14BDP-T1-GE3	Vishay Siliconix, N-Channel 30V 21A (Ta), 64A (Tc) 3.7W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	STH110N10F7-2	STMicroelectronics, N-Channel 100V 110A (Tc) 150W (Tc) Surface Mount H2Pak-2, DeepGATE™, STripFET™ VII	View
	DMN4468LSS-13	Diodes Incorporated, N-Channel 30V 10A (Ta) 1.52W (Ta) Surface Mount 8-SO,	View
	IRLML0040TRPBF	Infineon Technologies, N-Channel 40V 3.6A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®	View

TPN1R603PL,L1Q - Tags

TPN1R603PL,L1Q TPN1R603PL,L1Q PDF TPN1R603PL,L1Q datasheet TPN1R603PL,L1Q specification TPN1R603PL,L1Q image TPN1R603PL,L1Q India Renesas Electronics India TPN1R603PL,L1Q buy TPN1R603PL,L1Q TPN1R603PL,L1Q price TPN1R603PL,L1Q distributor TPN1R603PL,L1Q supplier TPN1R603PL,L1Q wholesales