Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4126DY-T1-GE3

SI4126DY-T1-GE3

SI4126DY-T1-GE3

Part NumberSI4126DY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 39A 8-SOIC

DatasheetSI4126DY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 39A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO

To learn about the specification of SI4126DY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4126DY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4126DY-T1-GE3.
We are offering SI4126DY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4126DY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4126DY
Standard Package	2500
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.75mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	105nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4405pF @ 15V
FET Feature	-
Power Dissipation (Max)	3.5W (Ta), 7.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4126DY-T1-GE3 - Related Products

	IRFZ44ESTRLPBF	Infineon Technologies, N-Channel 60V 48A (Tc) 110W (Tc) Surface Mount D2PAK, HEXFET®	View
	IRL630STRLPBF	Vishay Siliconix, N-Channel 200V 9A (Tc) 3.1W (Ta), 74W (Tc) Surface Mount D2PAK,	View
	FQD16N25CTM	ON Semiconductor, N-Channel 250V 16A (Tc) 160W (Tc) Surface Mount D-Pak, QFET®	View
	TK560P65Y,RQ	Toshiba Semiconductor and Storage, N-Channel 650V 7A (Tc) 60W (Tc) Surface Mount DPAK, DTMOSV	View
	DMN67D8LW-13	Diodes Incorporated, N-Channel 60V 240mA (Ta) 320mW (Ta) Surface Mount SOT-323,	View
	STP11NM80	STMicroelectronics, N-Channel 800V 11A (Tc) 150W (Tc) Through Hole TO-220AB, MDmesh™	View
	FCMT125N65S3	ON Semiconductor, N-Channel 650V 24A (Tc) 181W (Tc) Surface Mount 4-PQFN (8x8), SuperFET® III	View
	STH265N6F6-6AG	STMicroelectronics, N-Channel 60V 180A (Tc) 300W (Tc) Surface Mount H2PAK-6, Automotive, AEC-Q101, STripFET™ F6	View
	SQ4850EY-T1_GE3	Vishay Siliconix, N-Channel 60V 12A (Tc) 6.8W (Tc) Surface Mount 8-SO, Automotive, AEC-Q101, TrenchFET®	View
	SIHG100N60E-GE3	Vishay Siliconix, N-Channel 600V 30A (Tc) 208W (Tc) Through Hole TO-247AC,	View
	FDD86252	ON Semiconductor, N-Channel 150V 5A (Ta), 27A (Tc) 3.1W (Ta), 89W (Tc) Surface Mount D-PAK (TO-252), PowerTrench®	View
	BSP88H6327XTSA1	Infineon Technologies, N-Channel 240V 350mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®	View

SI4126DY-T1-GE3 - Tags

SI4126DY-T1-GE3 SI4126DY-T1-GE3 PDF SI4126DY-T1-GE3 datasheet SI4126DY-T1-GE3 specification SI4126DY-T1-GE3 image SI4126DY-T1-GE3 India Renesas Electronics India SI4126DY-T1-GE3 buy SI4126DY-T1-GE3 SI4126DY-T1-GE3 price SI4126DY-T1-GE3 distributor SI4126DY-T1-GE3 supplier SI4126DY-T1-GE3 wholesales