SI4126DY-T1-GE3
SI4126DY-T1-GE3
Part Number SI4126DY-T1-GE3 Description MOSFET N-CH 30V 39A 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 39A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO
To learn about the specification of SI4126DY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4126DY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4126DY-T1-GE3.
We are offering SI4126DY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI4126DY-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI4126DY Standard Package 2500 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 39A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.75mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 105nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4405pF @ 15V FET Feature - Power Dissipation (Max) 3.5W (Ta), 7.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)
SI4126DY-T1-GE3 - Related ProductsMore >>
SI8806DB-T2-E1 Vishay Siliconix, N-Channel 12V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®
View
APT1204R7BFLLG Microsemi Corporation, N-Channel 1200V 3.5A (Tc) 135W (Tc) Through Hole TO-247 [B], POWER MOS 7®
View
FDB13AN06A0 ON Semiconductor, N-Channel 60V 10.9A (Ta), 62A (Tc) 115W (Tc) Surface Mount D²PAK, PowerTrench®
View
BUK9215-55A,118 Nexperia USA Inc., N-Channel 55V 55A (Tc) 115W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™
View
SI7322ADN-T1-GE3 Vishay Siliconix, N-Channel 100V 15.1A (Tc) 26W (Tc) Surface Mount PowerPAK® 1212-8, ThunderFET®
View
SI8812DB-T2-E1 Vishay Siliconix, N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®
View
IRFU1N60APBF Vishay Siliconix, N-Channel 600V 1.4A (Tc) 36W (Tc) Through Hole TO-251AA,
View
TK3R1P04PL,RQ Toshiba Semiconductor and Storage, N-Channel 40V 58A (Tc) 87W (Tc) Surface Mount DPAK, U-MOSIX-H
View
NTHL040N65S3F ON Semiconductor, N-Channel 650V 65A (Tc) 446W (Tc) Through Hole TO-247-3, SuperFET® III
View
RFD3055LE ON Semiconductor, N-Channel 60V 11A (Tc) 38W (Tc) Through Hole I-PAK,
View
IXFA72N30X3 IXYS, N-Channel 300V 72A (Tc) 390W (Tc) Surface Mount TO-263AA, HiPerFET™
View
SIHF15N60E-E3 Vishay Siliconix, N-Channel 600V 15A (Tc) 34W (Tc) Through Hole TO-220 Full Pack,
View
SI4126DY-T1-GE3 - Tags
English
