SISS06DN-T1-GE3
SISS06DN-T1-GE3
Part Number SISS06DN-T1-GE3 Description MOSFET N-CHAN 30 V POWERPAK 1212 Package / Case PowerPAK® 1212-8SUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 47.6A (Ta), 172.6A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)
To learn about the specification of SISS06DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISS06DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISS06DN-T1-GE3.
We are offering SISS06DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SISS06DN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SISS06DN Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Gen IV Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 47.6A (Ta), 172.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.38mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 77nC @ 10V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 3660pF @ 15V FET Feature - Power Dissipation (Max) 5W (Ta), 65.7W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8S (3.3x3.3) Package / Case PowerPAK® 1212-8S
SISS06DN-T1-GE3 - Related ProductsMore >>
IXFY4N60P3 IXYS, N-Channel 600V 4A (Tc) 114W (Tc) Surface Mount TO-252, HiPerFET™, Polar3™
View
SI4134DY-T1-E3 Vishay Siliconix, N-Channel 30V 14A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO, TrenchFET®
View
IXTT2N170D2 IXYS, N-Channel 1700V 2A (Tj) 568W (Tc) Surface Mount TO-268,
View
FQPF20N06 ON Semiconductor, N-Channel 60V 15A (Tc) 30W (Tc) Through Hole TO-220F, QFET®
View
IPD80R1K4CEATMA1 Infineon Technologies, N-Channel 800V 3.9A (Tc) 63W (Tc) Surface Mount PG-TO252-3, CoolMOS™
View
FDD5N50TM-WS ON Semiconductor, N-Channel 500V 4A (Tc) 40W (Tc) Surface Mount D-Pak, UniFET™
View
IRFS7537TRLPBF Infineon Technologies, N-Channel 60V 173A (Tc) 230W (Tc) Surface Mount D²PAK (TO-263AB), HEXFET®, StrongIRFET™
View
IRL7833STRLPBF Infineon Technologies, N-Channel 30V 150A (Tc) 140W (Tc) Surface Mount D2PAK, HEXFET®
View
IPN50R1K4CEATMA1 Infineon Technologies, N-Channel 500V 4.8A (Tc) 5W (Tc) Surface Mount PG-SOT223, CoolMOS™ CE
View
RD3T100CNTL1 Rohm Semiconductor, N-Channel 200V 10A (Tc) 85W (Tc) Surface Mount TO-252,
View
IRFP260NPBF Infineon Technologies, N-Channel 200V 50A (Tc) 300W (Tc) Through Hole TO-247AC, HEXFET®
View
DMN2990UFZ-7B Diodes Incorporated, N-Channel 20V 250mA (Ta) 320mW (Ta) Surface Mount X2-DFN0606-3,
View
SISS06DN-T1-GE3 - Tags
English
