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IGT60R190D1SATMA1

IGT60R190D1SATMA1

Part NumberIGT60R190D1SATMA1

ManufacturerInfineon Technologies

DescriptionIC GAN FET 600V 23A 8HSOF

DatasheetIGT60R190D1S

Package / Case8-PowerSFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 12.5A (Tc) 55.5W (Tc) Surface Mount PG-HSOF-8-3

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IGT60R190D1SATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IGT60R190D1S
Standard Package	1
Manufacturer	Infineon Technologies
Series	CoolGaN™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	1.6V @ 960µA
Vgs (Max)	-10V
Input Capacitance (Ciss) (Max) @ Vds	157pF @ 400V
FET Feature	-
Power Dissipation (Max)	55.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOF-8-3
Package / Case	8-PowerSFN

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