Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQJQ100E-T1_GE3

SQJQ100E-T1_GE3

SQJQ100E-T1_GE3

Part NumberSQJQ100E-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 200A POWERPAK8

DatasheetSQJQ100E

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8

To learn about the specification of SQJQ100E-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQJQ100E-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQJQ100E-T1_GE3.
We are offering SQJQ100E-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQJQ100E-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQJQ100E
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	165nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	14780pF @ 25V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 8 x 8
Package / Case	8-PowerTDFN

SQJQ100E-T1_GE3 - Related Products

	IPN70R1K5CEATMA1	Infineon Technologies, N-Channel 700V 5.4A (Tc) 5W (Tc) Surface Mount PG-SOT223, CoolMOS™	View
	SIDR626DP-T1-GE3	Vishay Siliconix, N-Channel 60V 42.8A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC, TrenchFET® Gen IV	View
	FDS4672A	ON Semiconductor, N-Channel 40V 11A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	TSM045NB06CR RLG	Taiwan Semiconductor Corporation, N-Channel 60V 16A (Ta), 104A (Tc) 3.1W (Ta), 136W (Tc) Surface Mount 8-PDFN (5x6),	View
	STF14N80K5	STMicroelectronics, N-Channel 800V 12A (Tc) 30W (Tc) Through Hole TO-220FP, MDmesh™ K5	View
	IRFB23N20DPBF	Infineon Technologies, N-Channel 200V 24A (Tc) 3.8W (Ta), 170W (Tc) Through Hole TO-220AB, HEXFET®	View
	TSM900N06CW RPG	Taiwan Semiconductor Corporation, N-Channel 60V 11A (Tc) 25W (Tc) Surface Mount SOT-223,	View
	TK7A60W5,S5VX	Toshiba Semiconductor and Storage, N-Channel 600V 7A (Ta) 30W (Tc) Through Hole TO-220SIS, DTMOSIV	View
	DMN2450UFD-7	Diodes Incorporated, N-Channel 20V 900mA (Ta) 400mW (Ta) Surface Mount X1-DFN1212-3,	View
	FCP11N60F	ON Semiconductor, N-Channel 600V 11A (Tc) 125W (Tc) Through Hole TO-220-3, SuperFET™	View
	IXFP4N85X	IXYS, N-Channel 850V 3.5A (Tc) 150W (Tc) Through Hole TO-220AB (IXFP), HiPerFET™	View
	AO3422	Alpha & Omega Semiconductor Inc., N-Channel 55V 2.1A (Ta) 1.25W (Ta) Surface Mount SOT-23-3L,	View

SQJQ100E-T1_GE3 - Tags

SQJQ100E-T1_GE3 SQJQ100E-T1_GE3 PDF SQJQ100E-T1_GE3 datasheet SQJQ100E-T1_GE3 specification SQJQ100E-T1_GE3 image SQJQ100E-T1_GE3 India Renesas Electronics India SQJQ100E-T1_GE3 buy SQJQ100E-T1_GE3 SQJQ100E-T1_GE3 price SQJQ100E-T1_GE3 distributor SQJQ100E-T1_GE3 supplier SQJQ100E-T1_GE3 wholesales