IPB80N08S2L07ATMA1
IPB80N08S2L07ATMA1
Part Number IPB80N08S2L07ATMA1 Description MOSFET N-CH 75V 80A TO263-3 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 75V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2
To learn about the specification of IPB80N08S2L07ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPB80N08S2L07ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPB80N08S2L07ATMA1.
We are offering IPB80N08S2L07ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPB80N08S2L07ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB,IPP80N08S2L-07 Standard Package 1000 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.8mOhm @ 80A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 233nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5400pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-3-2 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB80N08S2L07ATMA1 - Related ProductsMore >>
BS170P Diodes Incorporated, N-Channel 60V 270mA (Ta) 625mW (Ta) Through Hole TO-92-3,
View
DN3545N8-G Microchip Technology, N-Channel 450V 200mA 1.6W (Ta) Surface Mount TO-243AA (SOT-89),
View
PSMN017-30BL,118 Nexperia USA Inc., N-Channel 30V 32A (Tc) 47W (Tc) Surface Mount D2PAK,
View
FCH125N65S3R0-F155 ON Semiconductor, N-Channel 650V 24A (Tc) 181W (Tc) Through Hole TO-247-3, SuperFET® III
View
TN2106K1-G Microchip Technology, N-Channel 60V 280mA (Tj) 360mW (Tc) Surface Mount TO-236AB (SOT23),
View
NVR4501NT1G ON Semiconductor, N-Channel 20V 3.2A (Ta) 1.25W (Tj) Surface Mount SOT-23-3 (TO-236),
View
IPW65R041CFDFKSA1 Infineon Technologies, N-Channel 650V 68.5A (Tc) 500W (Tc) Through Hole PG-TO247-3, CoolMOS™
View
2N7002-G Microchip Technology, N-Channel 60V 115mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB),
View
FDD3680 ON Semiconductor, N-Channel 100V 25A (Ta) 68W (Ta) Surface Mount TO-252, PowerTrench®
View
SIHP16N50C-E3 Vishay Siliconix, N-Channel 500V 16A (Tc) 250W (Tc) Through Hole TO-220AB,
View
NTHL082N65S3F ON Semiconductor, N-Channel 650V 40A (Tc) 313W (Tc) Through Hole TO-247-3, SuperFET® III
View
TN2510N8-G Microchip Technology, N-Channel 100V 730mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),
View
IPB80N08S2L07ATMA1 - Tags
English
