Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQJ850EP-T1_GE3

SQJ850EP-T1_GE3

SQJ850EP-T1_GE3

Part NumberSQJ850EP-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 60V 24A

DatasheetSQJ850EP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 24A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SQJ850EP-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQJ850EP-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQJ850EP-T1_GE3.
We are offering SQJ850EP-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQJ850EP-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQJ850EP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	23mOhm @ 10.3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1225pF @ 30V
FET Feature	-
Power Dissipation (Max)	45W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SQJ850EP-T1_GE3 - Related Products

	SIHG17N80E-GE3	Vishay Siliconix, N-Channel 800V 15A (Tc) 208W (Tc) Through Hole TO-247AC,	View
	BSC011N03LSATMA1	Infineon Technologies, N-Channel 30V 37A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
	IXFN48N50	IXYS, N-Channel 500V 48A (Tc) 520W (Tc) Chassis Mount SOT-227B, HiPerFET™	View
	IXFQ72N30X3	IXYS, N-Channel 300V 72A (Tc) 390W (Tc) Through Hole TO-3P, HiPerFET™	View
	NTD20N06T4G	ON Semiconductor, N-Channel 60V 20A (Ta) 1.88W (Ta), 60W (Tj) Surface Mount DPAK,	View
	STD16N60M2	STMicroelectronics, N-Channel 600V 12A (Tc) 110W (Tc) Surface Mount DPAK, MDmesh™ M2	View
	SSM3K329R,LF	Toshiba Semiconductor and Storage, N-Channel 30V 3.5A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSIII	View
	MCU05N60A-TP	Micro Commercial Co, N-Channel 600V 4.5A 1.25W (Tc) Surface Mount D-Pak,	View
	AUIRF1404ZSTRL	Infineon Technologies, N-Channel 40V 160A (Tc) 200W (Tc) Surface Mount D²PAK (TO-263AB), HEXFET®	View
	IRL40SC228	Infineon Technologies, N-Channel 40V 557A (Tc) 416W (Tc) Surface Mount D2PAK (7-Lead), StrongIRFET™	View
	IPD60R280P7SAUMA1	Infineon Technologies, N-Channel 600V 12A (Tc) 53W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7	View
	NTMFS6H836NT1G	ON Semiconductor, N-Channel 80V 15A (Ta), 74A (Tc) 3.7W (Ta), 89W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View

SQJ850EP-T1_GE3 - Tags

SQJ850EP-T1_GE3 SQJ850EP-T1_GE3 PDF SQJ850EP-T1_GE3 datasheet SQJ850EP-T1_GE3 specification SQJ850EP-T1_GE3 image SQJ850EP-T1_GE3 India Renesas Electronics India SQJ850EP-T1_GE3 buy SQJ850EP-T1_GE3 SQJ850EP-T1_GE3 price SQJ850EP-T1_GE3 distributor SQJ850EP-T1_GE3 supplier SQJ850EP-T1_GE3 wholesales