FQT7N10TF
FQT7N10TF
Part Number FQT7N10TF Description MOSFET N-CH 100V 1.7A SOT-223 Package / Case TO-261-4, TO-261AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 1.7A (Tc) 2W (Tc) Surface Mount SOT-223-4
To learn about the specification of FQT7N10TF, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add FQT7N10TF with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of FQT7N10TF.
We are offering FQT7N10TF for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
FQT7N10TF - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FQT7N10 Standard Package 1 Manufacturer ON Semiconductor Series QFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 350mOhm @ 850mA, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V FET Feature - Power Dissipation (Max) 2W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223-4 Package / Case TO-261-4, TO-261AA
FQT7N10TF - Related ProductsMore >>
SUP90142E-GE3 Vishay Siliconix, N-Channel 200V 90A (Tc) 375W (Tc) Through Hole TO-220AB, ThunderFET®
View
SIR800DP-T1-GE3 Vishay Siliconix, N-Channel 20V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
IPP80R750P7XKSA1 Infineon Technologies, N-Channel 800V 7A (Tc) 51W (Tc) Through Hole PG-TO220-3, CoolMOS™ P7
View
BSS87H6327FTSA1 Infineon Technologies, N-Channel 240V 260mA (Ta) 1W (Ta) Surface Mount PG-SOT89-4-2, SIPMOS®
View
RCX160N20 Rohm Semiconductor, N-Channel 200V 16A (Tc) 2.23W (Ta), 40W (Tc) Through Hole TO-220FM,
View
IPA60R385CPXKSA1 Infineon Technologies, N-Channel 600V 9A (Tc) 31W (Tc) Through Hole PG-TO220-FP, CoolMOS™
View
DMN601WK-7 Diodes Incorporated, N-Channel 60V 300mA (Ta) 200mW (Ta) Surface Mount SOT-323,
View
IRFB4110PBF Infineon Technologies, N-Channel 100V 120A (Tc) 370W (Tc) Through Hole TO-220AB, HEXFET®
View
TN0620N3-G Microchip Technology, N-Channel 200V 250mA (Tj) 1W (Tc) Through Hole TO-92-3,
View
IRFZ44NLPBF Infineon Technologies, N-Channel 55V 49A (Tc) 3.8W (Ta), 94W (Tc) Through Hole TO-262, HEXFET®
View
TSM900N06CH X0G Taiwan Semiconductor Corporation, N-Channel 60V 11A (Tc) 25W (Tc) Through Hole TO-251 (IPAK),
View
2N7000-D26Z ON Semiconductor, N-Channel 60V 200mA (Ta) 400mW (Ta) Through Hole TO-92-3,
View
FQT7N10TF - Tags
English
