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FQT7N10TF

FQT7N10TF

Part NumberFQT7N10TF

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 100V 1.7A SOT-223

DatasheetFQT7N10

Package / CaseTO-261-4, TO-261AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 1.7A (Tc) 2W (Tc) Surface Mount SOT-223-4

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FQT7N10TF - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FQT7N10
Standard Package	1
Manufacturer	ON Semiconductor
Series	QFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	350mOhm @ 850mA, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7.5nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	250pF @ 25V
FET Feature	-
Power Dissipation (Max)	2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223-4
Package / Case	TO-261-4, TO-261AA

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