IPB073N15N5ATMA1
IPB073N15N5ATMA1
Part Number IPB073N15N5ATMA1 Description MV POWER MOS Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 150V 114A (Tc) 214W (Tc) Surface Mount PG-TO263-3-2
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IPB073N15N5ATMA1 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB073N15N5 Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™-5 Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 114A (Tc) Drive Voltage (Max Rds On, Min Rds On) 8V, 10V Rds On (Max) @ Id, Vgs 7.3mOhm @ 57A, 10V Vgs(th) (Max) @ Id 4.6V @ 160µA Gate Charge (Qg) (Max) @ Vgs 61nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 75V FET Feature - Power Dissipation (Max) 214W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-3-2 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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