SQJ488EP-T1_GE3
SQJ488EP-T1_GE3
Part Number SQJ488EP-T1_GE3 Description MOSFET N-CH 100V POWERPAK SO8L Package / Case 8-PowerTDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 42A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
To learn about the specification of SQJ488EP-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQJ488EP-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQJ488EP-T1_GE3.
We are offering SQJ488EP-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SQJ488EP-T1_GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQJ488EP Standard Package 3000 Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 42A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 21mOhm @ 7.4A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 979pF @ 25V FET Feature - Power Dissipation (Max) 83W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case 8-PowerTDFN
SQJ488EP-T1_GE3 - Related ProductsMore >>
SI2310-TP Micro Commercial Co, N-Channel 60V 3A (Ta) 350mW (Ta) Surface Mount SOT-23,
View
NTMFS6H801NT1G ON Semiconductor, N-Channel 80V 23A (Ta), 157A (Tc) 3.8W (Ta), 166W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),
View
APT11N80BC3G Microsemi Corporation, N-Channel 800V 11A (Tc) 156W (Tc) Through Hole TO-247 [B],
View
STP11NM60ND STMicroelectronics, N-Channel 600V 10A (Tc) 90W (Tc) Through Hole TO-220AB, FDmesh™ II
View
IPP410N30NAKSA1 Infineon Technologies, N-Channel 300V 44A (Tc) 300W (Tc) Through Hole PG-TO220-3, OptiMOS™
View
IRFL4310TRPBF Infineon Technologies, N-Channel 100V 1.6A (Ta) 1W (Ta) Surface Mount SOT-223, HEXFET®
View
SI7414DN-T1-GE3 Vishay Siliconix, N-Channel 60V 5.6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
TK14G65W,RQ Toshiba Semiconductor and Storage, N-Channel 650V 13.7A (Ta) 130W (Tc) Surface Mount D2PAK, DTMOSIV
View
ZVN4525E6TA Diodes Incorporated, N-Channel 250V 230mA (Ta) 1.1W (Ta) Surface Mount SOT-23-6,
View
FQD13N10LTM ON Semiconductor, N-Channel 100V 10A (Tc) 2.5W (Ta), 40W (Tc) Surface Mount D-Pak, QFET®
View
RD3P175SNTL1 Rohm Semiconductor, N-Channel 100V 17.5A (Ta) 20W (Tc) Surface Mount TO-252,
View
PMV65UNER Nexperia USA Inc., N-Channel 20V 2.8A (Ta) 490mW (Ta) Surface Mount TO-236AB,
View
SQJ488EP-T1_GE3 - Tags
English
