Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPP126N10N3GXKSA1

IPP126N10N3GXKSA1

IPP126N10N3GXKSA1

Part NumberIPP126N10N3GXKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 58A TO220-3

DatasheetIPB123N10N3G, (IPP,IPI)126N10N3

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 58A (Tc) 94W (Tc) Through Hole PG-TO220-3

To learn about the specification of IPP126N10N3GXKSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPP126N10N3GXKSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPP126N10N3GXKSA1.
We are offering IPP126N10N3GXKSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPP126N10N3GXKSA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPB123N10N3G, (IPP,IPI)126N10N3
Standard Package	500
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	12.3mOhm @ 46A, 10V
Vgs(th) (Max) @ Id	3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2500pF @ 50V
FET Feature	-
Power Dissipation (Max)	94W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3

IPP126N10N3GXKSA1 - Related Products

	NTMFS5H419NLT1G	ON Semiconductor, N-Channel 40V 29A (Ta), 155A (Tc) 3.1W (Ta), 89W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	TK100E10N1,S1X	Toshiba Semiconductor and Storage, N-Channel 100V 100A (Ta) 255W (Tc) Through Hole TO-220, U-MOSVIII-H	View
	FDMS7658AS	ON Semiconductor, N-Channel 30V 29A (Ta), 70A (Tc) 2.5W (Ta), 89W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®, SyncFET™	View
	STB160N75F3	STMicroelectronics, N-Channel 75V 120A (Tc) 330W (Tc) Surface Mount D2PAK, STripFET™	View
	IRFR3806TRPBF	Infineon Technologies, N-Channel 60V 43A (Tc) 71W (Tc) Surface Mount D-Pak, HEXFET®	View
	IRFP450LCPBF	Vishay Siliconix, N-Channel 500V 14A (Tc) 190W (Tc) Through Hole TO-247-3,	View
	IPD60R950C6ATMA1	Infineon Technologies, N-Channel 600V 4.4A (Tc) 37W (Tc) Surface Mount PG-TO252-3, CoolMOS™ C6	View
	IXFK140N20P	IXYS, N-Channel 200V 140A (Tc) 830W (Tc) Through Hole TO-264AA (IXFK), PolarHT™ HiPerFET™	View
	STB6N65M2	STMicroelectronics, N-Channel 650V 4A (Tc) 60W (Tc) Surface Mount D2PAK, MDmesh™	View
	MCH3478-TL-W	ON Semiconductor, N-Channel 30V 2A (Ta) 800mW (Ta) Surface Mount 3-MCPH,	View
	TSM4NB65CI C0G	Taiwan Semiconductor Corporation, N-Channel 650V 4A (Tc) 70W (Tc) Through Hole ITO-220AB,	View
	RSR010N10TL	Rohm Semiconductor, N-Channel 100V 1A (Ta) 540mW (Ta) Surface Mount TSMT3,	View

IPP126N10N3GXKSA1 - Tags

IPP126N10N3GXKSA1 IPP126N10N3GXKSA1 PDF IPP126N10N3GXKSA1 datasheet IPP126N10N3GXKSA1 specification IPP126N10N3GXKSA1 image IPP126N10N3GXKSA1 India Renesas Electronics India IPP126N10N3GXKSA1 buy IPP126N10N3GXKSA1 IPP126N10N3GXKSA1 price IPP126N10N3GXKSA1 distributor IPP126N10N3GXKSA1 supplier IPP126N10N3GXKSA1 wholesales