Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPP126N10N3GXKSA1

IPP126N10N3GXKSA1

IPP126N10N3GXKSA1

Part NumberIPP126N10N3GXKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 58A TO220-3

DatasheetIPB123N10N3G, (IPP,IPI)126N10N3

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 58A (Tc) 94W (Tc) Through Hole PG-TO220-3

To learn about the specification of IPP126N10N3GXKSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPP126N10N3GXKSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPP126N10N3GXKSA1.
We are offering IPP126N10N3GXKSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPP126N10N3GXKSA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPB123N10N3G, (IPP,IPI)126N10N3
Standard Package	500
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	12.3mOhm @ 46A, 10V
Vgs(th) (Max) @ Id	3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2500pF @ 50V
FET Feature	-
Power Dissipation (Max)	94W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3

IPP126N10N3GXKSA1 - Related Products

	TPH4R50ANH,L1Q	Toshiba Semiconductor and Storage, N-Channel 100V 60A (Tc) 1.6W (Ta), 78W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H	View
	DN3765K4-G	Microchip Technology, N-Channel 650V 300mA (Tj) 2.5W (Ta) Surface Mount TO-252-3,	View
	TSM033NA03CR RLG	Taiwan Semiconductor Corporation, N-Channel 30V 129A (Tc) 96W (Tc) Surface Mount 8-PDFN (5x6),	View
	BSS138W-TP	Micro Commercial Co, N-Channel 50V 220mA (Ta) 300mW (Ta) Surface Mount SOT-323,	View
	SI7772DP-T1-GE3	Vishay Siliconix, N-Channel 30V 35.6A (Tc) 3.9W (Ta), 29.8W (Tc) Surface Mount PowerPAK® SO-8, SkyFET®, TrenchFET®	View
	FQD12N20TM	ON Semiconductor, N-Channel 200V 9A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount D-Pak, QFET®	View
	SQP60N06-15_GE3	Vishay Siliconix, N-Channel 60V 56A (Tc) 107W (Tc) Through Hole TO-220AB, Automotive, AEC-Q101, TrenchFET®	View
	NVTFS5C478NLWFTAG	ON Semiconductor, N-Channel 40V 26A (Tc) 20W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	IAUT300N08S5N014ATMA1	Infineon Technologies, N-Channel 80V 300A (DC) 300W (Tc) Surface Mount PG-HSOF-8-1, OptiMOS™-5	View
	STD4N80K5	STMicroelectronics, N-Channel 800V 3A (Tc) 60W (Tc) Surface Mount DPAK, SuperMESH5™	View
	STN2NF10	STMicroelectronics, N-Channel 100V 2.4A (Tc) 3.3W (Tc) Surface Mount SOT-223, STripFET™ II	View
	IXTP150N15X4	IXYS, N-Channel 150V 150A (Tc) 480W (Tc) Through Hole TO-220,	View

IPP126N10N3GXKSA1 - Tags

IPP126N10N3GXKSA1 IPP126N10N3GXKSA1 PDF IPP126N10N3GXKSA1 datasheet IPP126N10N3GXKSA1 specification IPP126N10N3GXKSA1 image IPP126N10N3GXKSA1 India Renesas Electronics India IPP126N10N3GXKSA1 buy IPP126N10N3GXKSA1 IPP126N10N3GXKSA1 price IPP126N10N3GXKSA1 distributor IPP126N10N3GXKSA1 supplier IPP126N10N3GXKSA1 wholesales