SIS476DN-T1-GE3
SIS476DN-T1-GE3
Part Number SIS476DN-T1-GE3
Description MOSFET N-CH 30V 40A 1212-8 PWR
Package / Case PowerPAK® 1212-8
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 30V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
To learn about the specification of SIS476DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS476DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS476DN-T1-GE3.
We are offering SIS476DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIS476DN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIS476DN
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 77nC @ 10V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 3595pF @ 15V
FET Feature -
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
SIS476DN-T1-GE3 - Related ProductsMore >>
BSZ097N10NS5ATMA1
Infineon Technologies, N-Channel 100V 8A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8-FL, OptiMOS™
View
MCMN2012-TP
Micro Commercial Co, N-Channel 20V 12A (Ta) Surface Mount DFN2020-6J,
View
2N7000-D74Z
ON Semiconductor, N-Channel 60V 200mA (Ta) 400mW (Ta) Through Hole TO-92-3,
View
IXFX21N100F
IXYS-RF, N-Channel 1000V 21A (Tc) 500W (Tc) Through Hole PLUS247™-3, HiPerRF™
View
VN2460N8-G
Microchip Technology, N-Channel 600V 200mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),
View
IPA60R385CPXKSA1
Infineon Technologies, N-Channel 600V 9A (Tc) 31W (Tc) Through Hole PG-TO220-FP, CoolMOS™
View
IRFS3006TRL7PP
Infineon Technologies, N-Channel 60V 240A (Tc) 375W (Tc) Surface Mount D2PAK (7-Lead), HEXFET®
View
FDN327N
ON Semiconductor, N-Channel 20V 2A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®
View
TPH3R003PL,LQ
Toshiba Semiconductor and Storage, N-Channel 30V 88A (Tc) 90W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSIX-H
View
IXFH30N85X
IXYS, N-Channel 850V 30A (Tc) 695W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™
View
SSM6K211FE,LF
Toshiba Semiconductor and Storage, N-Channel 20V 3.2A (Ta) 500mW (Ta) Surface Mount ES6, U-MOSIII
View
STS26N3LLH6
STMicroelectronics, N-Channel 30V 26A (Tc) 2.7W (Ta) Surface Mount 8-SO, DeepGATE™, STripFET™ VI
View
SIS476DN-T1-GE3 - Tags