Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQJ457EP-T1_GE3

SQJ457EP-T1_GE3

SQJ457EP-T1_GE3

Part NumberSQJ457EP-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 60V 36A POWERPAKSO-8

DatasheetSQJ457EP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 36A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SQJ457EP-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQJ457EP-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQJ457EP-T1_GE3.
We are offering SQJ457EP-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQJ457EP-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQJ457EP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	25mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	100nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3400pF @ 25V
FET Feature	-
Power Dissipation (Max)	68W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SQJ457EP-T1_GE3 - Related Products

	SSM6J215FE(TE85L,F	Toshiba Semiconductor and Storage, P-Channel 20V 3.4A (Ta) 500mW (Ta) Surface Mount ES6, U-MOSVI	View
	IRF9640STRRPBF	Vishay Siliconix, P-Channel 200V 11A (Tc) 125W (Tc) Surface Mount,	View
	SI2367DS-T1-GE3	Vishay Siliconix, P-Channel 20V 3.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	SSM3J56ACT,L3F	Toshiba Semiconductor and Storage, P-Channel 20V 1.4A (Ta) 500mW (Ta) Surface Mount CST3, U-MOSVI	View
	FDC638APZ	ON Semiconductor, P-Channel 20V 4.5A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®	View
	SUD50P08-25L-E3	Vishay Siliconix, P-Channel 80V 50A (Tc) 8.3W (Ta), 136W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	DMP1100UCB4-7	Diodes Incorporated, P-Channel 12V 2.5A (Ta) 670mW (Ta) Surface Mount X2-WLB0808-4, Automotive, AEC-Q101	View
	NTGS3455T1G	ON Semiconductor, P-Channel 30V 2.5A (Ta) 500mW (Ta) Surface Mount 6-TSOP,	View
	CPH3351-TL-W	ON Semiconductor, P-Channel 60V 1.8A (Ta) 1W (Ta) Surface Mount 3-CPH,	View
	ATP114-TL-H	ON Semiconductor, P-Channel 60V 55A (Ta) 60W (Tc) Surface Mount ATPAK,	View
	SQ4483EY-T1_GE3	Vishay Siliconix, P-Channel 30V 30A (Tc) 7W (Tc) Surface Mount 8-SOIC, Automotive, AEC-Q101, TrenchFET®	View
	DMP6110SFDF-7	Diodes Incorporated, P-Channel 60V 4.2A (Ta) 1.97W (Ta) Surface Mount U-DFN2020-6 (Type F), Automotive, AEC-Q101	View

SQJ457EP-T1_GE3 - Tags

SQJ457EP-T1_GE3 SQJ457EP-T1_GE3 PDF SQJ457EP-T1_GE3 datasheet SQJ457EP-T1_GE3 specification SQJ457EP-T1_GE3 image SQJ457EP-T1_GE3 India Renesas Electronics India SQJ457EP-T1_GE3 buy SQJ457EP-T1_GE3 SQJ457EP-T1_GE3 price SQJ457EP-T1_GE3 distributor SQJ457EP-T1_GE3 supplier SQJ457EP-T1_GE3 wholesales