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SI3429EDV-T1-GE3

SI3429EDV-T1-GE3

Part NumberSI3429EDV-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CHAN 20V TSOP6S

DatasheetSI3429EDV

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 8A (Ta), 8A (Tc) 4.2W (Tc) Surface Mount 6-TSOP

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SI3429EDV-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI3429EDV
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	8A (Ta), 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	21mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	118nC @ 10V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	4085pF @ 50V
FET Feature	-
Power Dissipation (Max)	4.2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6

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SI3429EDV-T1-GE3 - Tags

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