Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ RU1E002SPTCL

RU1E002SPTCL

RU1E002SPTCL

Part NumberRU1E002SPTCL

ManufacturerRohm Semiconductor

DescriptionMOSFET P-CH 30V 0.25A UMT3F

DatasheetRU1E002SP

Package / CaseSC-85

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 250mA (Ta) 200mW (Ta) Surface Mount UMT3F

To learn about the specification of RU1E002SPTCL, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RU1E002SPTCL with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RU1E002SPTCL.
We are offering RU1E002SPTCL for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

RU1E002SPTCL - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	RU1E002SP
Standard Package	1
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	1.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	30pF @ 10V
FET Feature	-
Power Dissipation (Max)	200mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	UMT3F
Package / Case	SC-85

RU1E002SPTCL - Related Products

	BSZ086P03NS3GATMA1	Infineon Technologies, P-Channel 30V 13.5A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™	View
	ATP103-TL-H	ON Semiconductor, P-Channel 30V 55A (Ta) 50W (Tc) Surface Mount ATPAK,	View
	CSD25310Q2	Texas Instruments, P-Channel 20V 20A (Ta) 2.9W (Ta) Surface Mount 6-WSON (2x2), NexFET™	View
	IRFP9140NPBF	Infineon Technologies, P-Channel 100V 23A (Tc) 140W (Tc) Through Hole TO-247AC, HEXFET®	View
	DMP1555UFA-7B	Diodes Incorporated, P-Channel 12V 200mA (Ta) 360mW (Ta) Surface Mount X2-DFN0806-3,	View
	SSM3J371R,LF	Toshiba Semiconductor and Storage, P-Channel 20V 4A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI	View
	RSD046P05TL	Rohm Semiconductor, P-Channel 45V 4.5A (Tc) 850mW (Ta), 15W (Tc) Surface Mount CPT3,	View
	IXTX32P60P	IXYS, P-Channel 600V 32A (Tc) 890W (Tc) Through Hole PLUS247™-3, PolarP™	View
	FQB11P06TM	ON Semiconductor, P-Channel 60V 11.4A (Tc) 3.13W (Ta), 53W (Tc) Surface Mount D²PAK (TO-263AB), QFET®	View
	NDS332P	ON Semiconductor, P-Channel 20V 1A (Ta) 500mW (Ta) Surface Mount SuperSOT-3,	View
	SI8401DB-T1-E1	Vishay Siliconix, P-Channel 20V 3.6A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot, TrenchFET®	View
	SUM90P10-19L-E3	Vishay Siliconix, P-Channel 100V 90A (Tc) 13.6W (Ta), 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®	View

RU1E002SPTCL - Tags

RU1E002SPTCL RU1E002SPTCL PDF RU1E002SPTCL datasheet RU1E002SPTCL specification RU1E002SPTCL image RU1E002SPTCL India Renesas Electronics India RU1E002SPTCL buy RU1E002SPTCL RU1E002SPTCL price RU1E002SPTCL distributor RU1E002SPTCL supplier RU1E002SPTCL wholesales