Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQJ412EP-T1_GE3

SQJ412EP-T1_GE3

SQJ412EP-T1_GE3

Part NumberSQJ412EP-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 32A PPAK SO-8

DatasheetSQJ412EP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 32A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SQJ412EP-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQJ412EP-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQJ412EP-T1_GE3.
We are offering SQJ412EP-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQJ412EP-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQJ412EP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.1mOhm @ 10.3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	120nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5950pF @ 20V
FET Feature	-
Power Dissipation (Max)	83W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SQJ412EP-T1_GE3 - Related Products

	R6020KNJTL	Rohm Semiconductor, N-Channel 600V 20A (Tc) 231W (Tc) Surface Mount TO-263,	View
	SQJQ100E-T1_GE3	Vishay Siliconix, N-Channel 40V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8, Automotive, AEC-Q101, TrenchFET®	View
	IXTK200N10L2	IXYS, N-Channel 100V 200A (Tc) 1040W (Tc) Through Hole TO-264 (IXTK), Linear L2™	View
	TSM70NB1R4CP ROG	Taiwan Semiconductor Corporation, N-Channel 700V 3A (Tc) 28W (Tc) Surface Mount TO-252, (D-Pak),	View
	2N7002-G	Microchip Technology, N-Channel 60V 115mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB),	View
	FDS8813NZ	ON Semiconductor, N-Channel 30V 18.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	SSM3K35AMFV,L3F	Toshiba Semiconductor and Storage, N-Channel 20V 250mA (Ta) 500mW (Ta) Surface Mount VESM, U-MOSIII	View
	IXTN102N65X2	IXYS, N-Channel 650V 76A (Tc) 595AW (Tc) Chassis Mount SOT-227,	View
	SQM90142E_GE3	Vishay Siliconix, N-Channel 200V 95A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak), Automotive, AEC-Q101, TrenchFET®	View
	STL12N60M2	STMicroelectronics, N-Channel 600V 6.5A (Tc) 52W (Tc) Surface Mount PowerFlat™ (5x6) HV, MDmesh™ M2	View
	R6007ENJTL	Rohm Semiconductor, N-Channel 600V 7A (Tc) 40W (Tc) Surface Mount LPTS (D2PAK),	View
	RCJ330N25TL	Rohm Semiconductor, N-Channel 250V 33A (Tc) 1.56W (Ta), 40W (Tc) Surface Mount LPTS,	View

SQJ412EP-T1_GE3 - Tags

SQJ412EP-T1_GE3 SQJ412EP-T1_GE3 PDF SQJ412EP-T1_GE3 datasheet SQJ412EP-T1_GE3 specification SQJ412EP-T1_GE3 image SQJ412EP-T1_GE3 India Renesas Electronics India SQJ412EP-T1_GE3 buy SQJ412EP-T1_GE3 SQJ412EP-T1_GE3 price SQJ412EP-T1_GE3 distributor SQJ412EP-T1_GE3 supplier SQJ412EP-T1_GE3 wholesales